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Dielectric Materials Research for Advanced Microelectronic Devices
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The advanced organic materials group at IBM has been working in the area of low-k dielectric materials since 1995. Its current
scientific interest focuses on the design of mechanically robust organosilicates, the characterization and integration of highly porous
materials and the development of vapor phase surface modification/functionalization.
SIMPLIFIED SCHEMATIC OF A
TYPICAL CPU INTERCONNECT STRUCTURE
Low-k materials are targeted for M1 (1X) and intermediate
wiring levels (2X & 4X) in the BEOL. Global wiring levels make use of the mechanical robustness imparted by USG and FSG.
http://www.itrs.net/Links/2006Update/FinalToPost/09_Interconnect2006Update.pdf
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Mechanically Robust Organosilicates
Porous Materials: Concept → Integration
Vapor Phase Surface Modification/Functionalization
- ILD repair
- Surface functionalization
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